Compact resistive random access memory integrated with a pass gate transistor

ABSTRACT

A method of forming a resistive random access memory (ReRAM) device is provided. The method includes depositing a lower cap layer on a substrate, depositing a dielectric memory layer on the lower cap layer, and depositing an upper cap layer on the dielectric memory layer. The method further includes removing portions of the lower cap layer to form a lower cap slab, dielectric memory layer to form a dielectric memory slab on the lower cap slab, and upper cap layer to form an upper cap slab on the dielectric memory slab, wherein the lower cap slab, dielectric memory slab, and upper cap slab form a resistive memory element.

BACKGROUND Technical Field

The present invention generally relates to resistive memory, and moreparticularly to a resistive random access memory arrangement.

Description of the Related Art

A Field Effect Transistor (FET) typically has a source, a channel, and adrain, where current flows from the source to the drain, and a gate thatcontrols the flow of current through the device channel. Field EffectTransistors (FETs) can have a variety of different structures, forexample, FETs have been fabricated with the source, channel, and drainformed in the substrate material itself, where the current flowshorizontally (i.e., in the plane of the substrate), and FinFETs havebeen formed with the channel extending outward from the substrate, butwhere the current also flows horizontally from a source to a drain. Thechannel for the FinFET can be an upright slab of thin rectangularsilicon (Si), commonly referred to as the fin with a gate on the fin, ascompared to a metal-oxide-semiconductor field effect transistor (MOSFET)with a single gate parallel with the plane of the substrate. Dependingon the doping of the source and drain, an NFET or a PFET can be formed.Two FETs also can be coupled to form a complementary metal oxidesemiconductor (CMOS) device, where a p-type MOSFET and n-type MOSFET arecoupled together.

SUMMARY

In accordance with an embodiment of the present invention, a method offorming a resistive random access memory (ReRAM) device is provided. Themethod includes depositing a lower cap layer on a substrate, depositinga dielectric memory layer on the lower cap layer, and depositing anupper cap layer on the dielectric memory layer. The method furtherincludes removing portions of the lower cap layer to form a lower capslab, dielectric memory layer to form a dielectric memory slab on thelower cap slab, and upper cap layer to form an upper cap slab on thedielectric memory slab, wherein the lower cap slab, dielectric memoryslab, and upper cap slab form a resistive memory element.

In accordance with another embodiment of the present invention, a methodof forming a resistive random access memory (ReRAM) device is provided.The method includes forming a vertical fin on a substrate, and growing asource/drain on the vertical fin. The method further includes forming asource/drain contact to the source/drain. The method further includesdepositing a lower cap layer on the source/drain contact, depositing adielectric memory layer on the lower cap layer, and depositing an uppercap layer on the dielectric memory layer. The method further includesremoving portions of the lower cap layer, dielectric memory layer, andupper cap layer to form a resistive memory element on the source/draincontact.

In accordance with yet another embodiment of the present invention, aresistive random access memory (ReRAM) device is provided. The deviceincludes a vertical fin on a substrate, and a first source/drain on thevertical fin. The device further includes a first source/drain contacton the source/drain, and a lower cap slab on the first source/draincontact. The device further includes a dielectric memory slab on thelower cap slab, and an upper cap slab on the dielectric memory slab,wherein the lower cap slab, dielectric memory slab, and upper cap slabform a resistive memory element electrically coupled to the firstsource/drain.

These and other features and advantages will become apparent from thefollowing detailed description of illustrative embodiments thereof,which is to be read in connection with the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The following description will provide details of preferred embodimentswith reference to the following figures wherein:

FIG. 1 is a cross-sectional side view showing a field effect transistorwith source/drain contacts formed through an interlayer dielectriclayer, in accordance with an embodiment of the present invention;

FIG. 2 is a cross-sectional side view showing a resistive memorytri-layer formed on the interlayer dielectric layer and source/draincontacts, in accordance with an embodiment of the present invention;

FIG. 3 is a cross-sectional side view showing a masking layer on theresistive memory tri-layer, in accordance with an embodiment of thepresent invention;

FIG. 4 is a cross-sectional side view showing a resistive elementtemplate patterned on the resistive memory tri-layer, in accordance withan embodiment of the present invention;

FIG. 5 is a cross-sectional side view showing a resistive elementtemplate on a patterned resistive memory tri-layer, in accordance withan embodiment of the present invention;

FIG. 6 is a cross-sectional side view showing a protective liner on theresistive element template and patterned resistive memory tri-layer, inaccordance with an embodiment of the present invention;

FIG. 7 is a cross-sectional side view showing an upper interlayerdielectric (ILD) layer on the protective liner and patterned resistivememory tri-layer, in accordance with an embodiment of the presentinvention;

FIG. 8 is a cross-sectional side view showing a trench formed in theupper interlayer dielectric layer and protective liner to a source/draincontact, in accordance with an embodiment of the present invention;

FIG. 9 is a cross-sectional side view showing the protective lineropened up and the resistive element template removed, in accordance withan embodiment of the present invention; and

FIG. 10 is a cross-sectional side view showing conductive contactsformed to the source/drain contact and resistive memory element, inaccordance with an embodiment of the present invention.

DETAILED DESCRIPTION

Embodiments of the invention provide a method of fabricating a resistivememory element and pass transistor on a substrate. The resistive memoryelement can be electrically coupled to a source/drain of the transistorthrough a conductive source/drain contact to form a one transistor-oneresistive element resistive random access memory (ReRAM) device.

The resistive memory element can include a refractive metal oxide layersandwiched between two refractive metal nitride layers, where one therefractive metal nitride layers is in electrical contact with asource/drain contact. The refractive metal nitride layer can bedeposited on an interlayer dielectric (ILD) layer in direct physicalcontact with the source/drain contact.

The resistive memory element can be fabricated as a square orrectangular device situated between a field effect transistor formedduring a front end of line (FEOL) process and a first metallizationlayer formed during a back end of line (BEOL) process.

Exemplary applications/uses to which the present invention can beapplied include, but are not limited to: memory devices, including, butnot limited to, flash memory arrays, dynamic random access memory (DRAM)arrays, and static random access memory (SRAM) arrays.

It is to be understood that aspects of the present invention will bedescribed in terms of a given illustrative architecture; however, otherarchitectures, structures, substrate materials and process features andsteps can be varied within the scope of aspects of the presentinvention.

Referring now to the drawings in which like numerals represent the sameor similar elements and initially to FIG. 1, a field effect transistorwith source/drain contacts formed through an interlayer dielectric layeris shown, in accordance with an embodiment of the present invention.

In one or more embodiments, a field effect transistor device 100 can beformed on a substrate 110. The field effect transistor device 100 can bea planar metal-oxide-semiconductor field effect transistor (MOSFET), avertical transport fin field effect transistor (VT FinFET), or ahorizontal transport fin field effect transistor (HT FinFET) device.While a horizontal transport fin field effect transistor (HT FinFET)device is depicted in the drawings, this is for illustrative purposesonly, and not intended to limit the scope of the invention or claims.

The field effect transistor (FET) device 100 can include a vertical fin111, or other device channel, formed on the substrate; a gate structureincluding gate sidewall spacers 160, a gate dielectric layer 170, and aconductive gate electrode 180 formed on the vertical fin 111; and asource/drain 130 formed on each of the opposite sides of the gatestructure. The field effect transistor device 100 can includesource/drain contacts 150 formed through a lower interlayer dielectric(ILD) layer 140. Isolation regions 120 having a dielectric fill can beformed around the FET device to electrically separate neighboringdevices from each other.

In various embodiments, the vertical fin 111 can be formed on thesubstrate 110 using patterning and etching processes including sidewallimage transfer (SIT), a self-aligned double patterning (SADP) process,self-aligned triple patterning (SATP) process, or a self-alignedquadruple patterning (SAQP). The vertical fins 111 may be formed by adirect write process or double patterning process using, for example,immersion lithography, extreme ultraviolet lithography, or x-raylithography.

In one or more embodiments, a substrate 110 can be, for example, asingle crystal semiconductor material wafer or asemiconductor-on-insulator stacked wafer. The substrate 110 can includea support layer that provides structural support, and an activesemiconductor layer that can form devices. An insulating layer (e.g., aburied oxide (BOX) layer) may be between the active semiconductor layerand the support layer to form a semiconductor-on-insulator substrate(SeOI) (e.g., a silicon-on-insulator substrate (SOI)), or an implantedlayer can form a buried insulating material.

The support layer can include crystalline, semi-crystalline,micro-crystalline, nano-crystalline, and/or amorphous phases. Thesupport layer can be a semiconductor (e.g., silicon (Si), siliconcarbide (SiC), silicon-germanium (SiGe), germanium (Ge),gallium-arsenide (GaAs), cadmium-telluride (CdTe), etc.), an insulator(e.g.: glass (e.g. silica, borosilicate glass), ceramic (e.g., aluminumoxide (Al₂O₃, sapphire), plastic (e.g., polycarbonate,polyacetonitrile), metal (e.g. aluminum, gold, titanium,molybdenum-copper (MoCu) composites, etc.), or combination thereof.

The substrate 110 or active semiconductor layer can be a crystallinesemiconductor, for example, a IV or IV-IV semiconductor (e.g., silicon(Si), silicon carbide (SiC), silicon-germanium (SiGe), germanium (Ge)),a III-V semiconductor (e.g., gallium-arsenide (GaAs), indium-phosphide(InP), indium-antimonide (InSb)), a II-VI semiconductor (e.g.,cadmium-telluride (CdTe), zinc-telluride (ZnTe), zinc sulfide (ZnS),zinc selenide (ZnSe)), or a IV-VI semiconductor (e.g., tin sulfide(SnS), lead selenide (PbSb)).

In various embodiments, source/drains 130 can be formed on the verticalfin(s) 111, where the source/drains 130 can be formed by epitaxialgrowth or heteroepitaxial growth on the vertical fin surfaces. Thesource/drains 130 can be a crystalline semiconductor material,including, but not limited to, silicon (Si), silicon carbide (SiC),silicon-germanium (SiGe), and germanium (Ge), that can include a dopant.The dopant(s) can be an n-type dopant (e.g., phosphorus (P), arsenic(As)) or p-type dopant (e.g., boron (B), gallium (Ga)). The dopants canbe introduced into the source/drains 130 during formation (i.e., insitu) or after formation (i.e., ex situ), for example, by ionimplantation.

The gate structure can be formed by a gate-first process, where the gatedielectric layer 170 and conductive gate electrode 180 can be formeddirectly on the vertical fin 111, or a gate-last process where a dummygate fill can be formed within the gate sidewall spacers 160 andsubsequently replaced with the gate dielectric layer 170 and conductivegate electrode 180. In various embodiments, the gate structure caninclude a work function metal layer on the gate dielectric layer 170, aspart of the conductive gate electrode 180.

In various embodiments, an interlayer dielectric (ILD) layer 140 can beformed on the vertical fin 111, source/drains 130, and gate structure.Openings can be formed in the ILD layer 140 and a source/drain contact150 formed in the openings to each of the source/drains 130. Thesource/drains 130 can include silicide layers formed at the interface ofa metal fill in the ILD openings and the silicon of a silicon-containingsource/drain 130. In various embodiments, the source/drain contacts 150can be a metal, for example, tungsten, ruthenium, molybdenum, cobalt,copper, aluminum, and suitable combinations thereof. In variousembodiments, the source/drain contacts 150 can be tungsten (W).

In various embodiments, a chemical-mechanical polishing (CMP) can beused to provide a smooth, flat surface for the top surface of the ILDlayer 140 and source/drain contacts 150.

FIG. 2 is a cross-sectional side view showing a resistive memorytri-layer formed on the interlayer dielectric layer and source/draincontacts, in accordance with an embodiment of the present invention.

In one or more embodiments, a lower cap layer 190 can be formed on theexposed, top surface of the ILD layer 140 and source/drain contacts 150,where the lower cap layer 190 can be formed by a deposition process,including, but not limited to, atomic layer deposition (ALD), plasmaenhanced ALD (PEALD), chemical vapor deposition (CVD), plasma enhancedCVD (PECVD), metal-organic CVD (MOCVD), and combinations thereof.

In various embodiments, the lower cap layer 190 can be a refractorymetal nitride, for example, titanium nitride (TiN), zirconium nitride(ZrN), hafnium nitride (HfN), tantalum nitride (TaN), niobium nitride(NbN), and combinations thereof.

In various embodiments, the lower cap layer 190 can have a thickness ina range of about 2 nanometers (nm) to about 50 nm, or about 5 nm toabout 15 nm, or about 10 nm, although other thicknesses are alsocontemplated. The lower cap layer 190 can have a thickness sufficient toact as a diffusion barrier between the underlying ILD layer 140 andsource/drain contacts 150 and a subsequently formed dielectric memorylayer, while providing a conductive path from the source/drain contact150 to the dielectric memory layer.

In one or more embodiments, a dielectric memory layer 200 can be formedon the lower cap layer 190, where the dielectric memory layer 200 can beformed by a deposition process, including, but not limited to, atomiclayer deposition (ALD), plasma enhanced ALD (PEALD), chemical vapordeposition (CVD), plasma enhanced CVD (PECVD), metal-organic CVD(MOCVD), and combinations thereof.

In various embodiments, the dielectric memory layer 200 can be a high-k,refractory metal oxide, for example, hafnium oxide (HfO), zirconiumoxide (ZrO), lanthanum oxide (LaO), and combinations thereof.

In various embodiments, the dielectric memory layer 200 can have athickness in a range of about 2 nanometers (nm) to about 15 nm, or about4 nm to about 10 nm, or about 7 nm, although other thicknesses are alsocontemplated. The dielectric memory layer 200 can have a thicknesssufficient to exhibit resistivity changes with an external bias, such asvoltage, that provides a measurable change in resistance.

In one or more embodiments, an upper cap layer 210 can be formed on theexposed, top surface of the dielectric memory layer 200, where the uppercap layer 210 can be formed by a deposition process, including, but notlimited to, atomic layer deposition (ALD), plasma enhanced ALD (PEALD),chemical vapor deposition (CVD), plasma enhanced CVD (PECVD),metal-organic CVD (MOCVD), and combinations thereof.

In various embodiments, the upper cap layer 210 can be a refractorymetal nitride, for example, titanium nitride (TiN), zirconium nitride(ZrN), hafnium nitride (HfN), tantalum nitride (TaN), niobium nitride(NbN), and combinations thereof. The upper cap layer 210 can be the samerefractory metal nitride as the lower cap layer 190, or a differentrefractory metal nitride.

In various embodiments, the upper cap layer 210 can have a thickness ina range of about 2 nm to about 50 nm, or about 5 nm to about 15 nm, orabout 10 nm, although other thicknesses are also contemplated. The uppercap layer 210 can have a thickness sufficient to act as a diffusionbarrier between the underlying dielectric memory layer 200 and asubsequently formed memory element contact, while providing a conductivepath from the dielectric memory layer 200 to the memory element contact.

In one or more embodiments, the lower cap layer 190, dielectric memorylayer 200, and upper cap layer 210 resistive memory tri-layer that canbe patterned to form a resistive memory element electrically coupled toa FET. In various embodiments, the upper cap layer 210 and lower caplayer 190 can be the same material and the same thickness to providesymmetrical properties on both sides of the dielectric memory layer 200.

FIG. 3 is a cross-sectional side view showing a masking layer on theresistive memory tri-layer, in accordance with an embodiment of thepresent invention.

In one or more embodiments, a masking layer 220 can be formed on theupper cap layer 210, where the masking layer 220 can be formed by adeposition or spin-on process. The masking layer 220 can be a hardmask,a softmask, or a combination thereof. The hardmask can be a dielectriclayer or amorphous carbon (a-C). The softmask can be a lithographicresist material that can be patterned and developed to form maskingtemplates. In various embodiments, the masking layer 220 can beamorphous carbon (a-C).

FIG. 4 is a cross-sectional side view showing a resistive elementtemplate patterned on the resistive memory tri-layer, in accordance withan embodiment of the present invention.

In one or more embodiments, the masking layer 220 can be patterned anddeveloped to form a resistive element template 225 on the upper caplayer 210 using lithography and etching processes. The resistive elementtemplate 225 can be formed above one of the source/drain contacts 150,where the resistive element template 225 can be configured anddimensioned for forming a resistive memory element on the source/draincontact 150. Formation of the resistive element template 225 can exposeportions of the upper cap layer 210 over other portions of the fieldeffect transistor device 100.

In various embodiments, the resistive element template 225 can have awidth in a range of about 40 nm to about 1000 nm, or about 60 nm toabout 500 nm, or about 50 nm to about 100 nm, although other widths arealso contemplated. In various embodiments, the resistive elementtemplate 225 can have a length in a range of about 40 nm to about 1000nm, or about 60 nm to about 500 nm, or about 50 nm to about 100 nm,although other lengths are also contemplated. The resistive elementtemplate 225 can have a square or rectangular shape on the upper caplayer 210.

FIG. 5 is a cross-sectional side view showing a resistive elementtemplate on a patterned resistive memory tri-layer, in accordance withan embodiment of the present invention.

In one or more embodiments, the exposed portions of the underlying uppercap layer 210 can be removed using a selective directional etch (e.g.,reactive ion etch (RIE)). Removal of the exposed portions of theunderlying upper cap layer 210 can expose underlying portions of thedielectric memory layer 200, which can be removed using a selectivedirectional etch to expose the underlying lower cap layer 190. Theexposed portions of the lower cap layer 190 can be removed to expose thelower interlayer dielectric (ILD) layer 140, and one of the source/draincontacts 150.

Removal of portions of the upper cap layer 210, dielectric memory layer200, and lower cap layer 190 can leave a resistive memory element 219under the resistive element template 225. Removal of the exposedportions of the upper cap layer 210 can form an upper cap slab 215 underthe resistive element template 225. Removal of the exposed portions ofthe dielectric memory layer 200 can form a dielectric memory slab 205under the upper cap slab 215. Removal of the exposed portions of thelower cap layer 190 can form a lower cap slab 195 under the dielectricmemory slab 205. The upper cap slab 215, dielectric memory slab 205, andlower cap slab 195 can form a resistive memory element 219. Theresistive memory element 219 can be positioned above and in electricalconnection with a source/drain contact 150. In various embodiments, theresistive memory element 219 can be in direct contact with thesource/drain contact 150.

In various embodiments, the resistive memory element 219 can cover asurface area of about 100 nm² to about 500,000 nm², or about 100 nm² toabout 100,000 nm², or about 500 nm² to about 500,000 nm², or about 500nm² to about 50,000 nm², where the area of the resistive elementtemplate 225 can be the same.

FIG. 6 is a cross-sectional side view showing a protective liner on theresistive element template and patterned resistive memory tri-layer, inaccordance with an embodiment of the present invention.

In one or more embodiments, a protective liner 230 can be formed on theresistive element template 225 and resistive memory element 219, wherethe protective liner 230 can be formed by a conformal deposition, forexample, ALD, PEALD, and combinations thereof.

In various embodiments, the protective liner 230 can be a dielectricmaterial, including, but not limited to, silicon nitride (SiN), siliconoxynitride (SiON), silicon boronitride (SiBN), silicon boro carbonitride(SiBCN), silicon carbonitride (SiCN), silicon oxycarbonitride (SiOCN),and combinations thereof. The protective liner 230 can protect theresistive element template 225 and resistive memory element 219 duringprocessing of an upper interlayer dielectric (ILD) layer.

In various embodiments, the protective liner 230 can have a thickness ina range of about 10 nm to about 100 nm, or about 20 nm to about 30 nm,where the thickness can be sufficient to protect the resistive elementtemplate 225 and resistive memory element 219 during etching of theupper interlayer dielectric (ILD) layer.

FIG. 7 is a cross-sectional side view showing an upper interlayerdielectric (ILD) layer on the protective liner and patterned resistivememory tri-layer, in accordance with an embodiment of the presentinvention.

In one or more embodiments, an upper interlayer dielectric (ILD) layer240 can be formed on the protective liner 230, where the upperinterlayer dielectric (ILD) layer 240 can be formed by a deposition,spin-on process, or combination thereof.

In various embodiments, the upper interlayer dielectric (ILD) layer 240can cover the protective liner 230, and a CMP can be used to reduce theheight of the upper ILD layer 240 to expose the top surface of theprotective liner 230 on the resistive element template 225.

FIG. 8 is a cross-sectional side view showing a trench formed in theupper interlayer dielectric layer and protective liner to a source/draincontact, in accordance with an embodiment of the present invention.

In one or more embodiments, the exposed surface of the upper ILD layer240 can be masked, patterned, and etched to form a trench 245 throughthe ILD layer 240 and protective liner 230 to the source/drain contact150 not covered by the resistive memory element 219.

FIG. 9 is a cross-sectional side view showing the protective lineropened up and the resistive element template removed, in accordance withan embodiment of the present invention.

In one or more embodiments, the portion of the protective liner exposedin the upper ILD layer 240 can be removed using a selective etch (e.g.,wet chemical etch, dry plasma etch) to expose the resistive elementtemplate 225, where upright portions of the protective liner 230 canremain on the sidewalls of the resistive element template 225. Theresistive element template 225 can be removed using a selective etch(e.g., wet chemical etch, dry plasma etch) to form a cavity 227 exposingan upper cap slab 215 of the resistive memory element 219 betweenupright portions of the protective liner 230.

FIG. 10 is a cross-sectional side view showing conductive contactsformed to the source/drain contact and resistive memory element, inaccordance with an embodiment of the present invention.

In one or more embodiments, a conductive contact 250 can be formed tothe source/drain contact 150, and a memory element contact 260 can beformed to the upper cap slab 215 of the resistive memory element 219.The conductive contact 250 and memory element contact 260 can be formedby a deposition on the upper ILD layer 240, and a CMP to remove contactmaterial on or above the surface of the upper ILD layer 240.

The conductive contact 250 and memory element contact 260 can be aconductive material including, but not limited to, a metal (e.g.,tungsten, titanium, tantalum, ruthenium, zirconium, molybdenum, cobalt,copper, aluminum, platinum, silver, gold), a conducting metalliccompound material (e.g., tantalum nitride, titanium nitride, tantalumcarbide, titanium carbide, titanium aluminum carbide, tungsten silicide,tungsten nitride, ruthenium oxide, cobalt silicide, nickel silicide),carbon nanotubes, conductive carbon, graphene, or any suitablecombination of these materials. The conductive contact 250 and memoryelement contact 260 can include a barrier liner on the sidewalls of thetrench 245 and cavity 227, where the barrier liner can be a refractorymetal nitride (e.g., TiN, TaN, etc.) or refractory metal carbide (e.g.,TiC, TaC, etc.) formed by ALD or PEALD.

In various embodiments, the field effect transistor device 100 cancontrol the flow of current through the resistive memory element 219and/or applied voltage to change the state of the resistive memoryelement.

In various embodiments, the resistive memory element 219 can beprogrammed by flowing a current through the dielectric memory slab 205,or applying a voltage bias across the dielectric memory slab 205. Thefield effect transistor device 100 can control the current flow orvoltage bias through a voltage applied to the gate structure, where thefield effect transistor device 100 can be addressed by a memory accesscontroller. The resistivity of the resistive memory element 219 can bemeasured to determine whether a “0” or “1” is stored in the dielectricmemory slab 205.

It will be understood that when an element such as a layer, region orsubstrate is referred to as being “on” or “over” another element, it canbe directly on the other element or intervening elements can also bepresent. In contrast, when an element is referred to as being “directlyon” or “directly over” another element, there are no interveningelements present. It will also be understood that when an element isreferred to as being “connected” or “coupled” to another element, it canbe directly connected or coupled to the other element or interveningelements can be present. In contrast, when an element is referred to asbeing “directly connected” or “directly coupled” to another element,there are no intervening elements present.

The present embodiments can include a design for an integrated circuitchip, which can be created in a graphical computer programming language,and stored in a computer storage medium (such as a disk, tape, physicalhard drive, or virtual hard drive such as in a storage access network).If the designer does not fabricate chips or the photolithographic masksused to fabricate chips, the designer can transmit the resulting designby physical means (e.g., by providing a copy of the storage mediumstoring the design) or electronically (e.g., through the Internet) tosuch entities, directly or indirectly. The stored design is thenconverted into the appropriate format (e.g., GDSII) for the fabricationof photolithographic masks, which typically include multiple copies ofthe chip design in question that are to be formed on a wafer. Thephotolithographic masks are utilized to define areas of the wafer(and/or the layers thereon) to be etched or otherwise processed.

Methods as described herein can be used in the fabrication of integratedcircuit chips. The resulting integrated circuit chips can be distributedby the fabricator in raw wafer form (that is, as a single wafer that hasmultiple unpackaged chips), as a bare die, or in a packaged form. In thelatter case, the chip is mounted in a single chip package (such as aplastic carrier, with leads that are affixed to a motherboard or otherhigher level carrier) or in a multichip package (such as a ceramiccarrier that has either or both surface interconnections or buriedinterconnections). In any case, the chip is then integrated with otherchips, discrete circuit elements, and/or other signal processing devicesas part of either (a) an intermediate product, such as a motherboard, or(b) an end product. The end product can be any product that includesintegrated circuit chips, ranging from toys and other low-endapplications to advanced computer products having a display, a keyboardor other input device, and a central processor.

It should also be understood that material compounds will be describedin terms of listed elements, e.g., SiGe. These compounds includedifferent proportions of the elements within the compound, e.g., SiGeincludes Si_(x)Ge_(1-x) where x is less than or equal to 1, etc. Inaddition, other elements can be included in the compound and stillfunction in accordance with the present principles. The compounds withadditional elements will be referred to herein as alloys.

Reference in the specification to “one embodiment” or “an embodiment”,as well as other variations thereof, means that a particular feature,structure, characteristic, and so forth described in connection with theembodiment is included in at least one embodiment. Thus, the appearancesof the phrase “in one embodiment” or “in an embodiment”, as well anyother variations, appearing in various places throughout thespecification are not necessarily all referring to the same embodiment.

It is to be appreciated that the use of any of the following “/”,“and/or”, and “at least one of”, for example, in the cases of “A/B”, “Aand/or B” and “at least one of A and B”, is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of both options (A andB). As a further example, in the cases of “A, B, and/or C” and “at leastone of A, B, and C”, such phrasing is intended to encompass theselection of the first listed option (A) only, or the selection of thesecond listed option (B) only, or the selection of the third listedoption (C) only, or the selection of the first and the second listedoptions (A and B) only, or the selection of the first and third listedoptions (A and C) only, or the selection of the second and third listedoptions (B and C) only, or the selection of all three options (A and Band C). This can be extended, as readily apparent by one of ordinaryskill in this and related arts, for as many items listed.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of exampleembodiments. As used herein, the singular form “a,” “an” and “the” areintended to include the plural forms as well, unless the context clearlyindicates otherwise. It will be further understood that the terms“comprises,” “comprising,” “includes” and/or “including,” when usedherein, specify the presence of stated features, integers, steps,operations, elements and/or components, but do not preclude the presenceor addition of one or more other features, integers, steps, operations,elements, components and/or groups thereof.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper,” and the like, can be used herein for ease of description todescribe one element's or feature's relationship to another element(s)or feature(s) as illustrated in the FIGS. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the FIGS. For example if the device in the FIGS.is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the term “below” can encompass both an orientation ofabove and below. The device can be otherwise oriented (rotated 90degrees or at other orientations), and the spatially relativedescriptors used herein can be interpreted accordingly. In addition, itwill also be understood that when a layer is referred to as being“between” two layers, it can be the only layer between the two layers,or one or more intervening layers can also be present.

It will be understood that, although the terms first, second, etc. canbe used herein to describe various elements, these elements should notbe limited by these terms. These terms are only used to distinguish oneelement from another element. Thus, a first element discussed belowcould be termed a second element without departing from the scope of thepresent concept.

Having described preferred embodiments of a device and fabricationmethod (which are intended to be illustrative and not limiting), it isnoted that modifications and variations can be made by persons skilledin the art in light of the above teachings. It is therefore to beunderstood that changes may be made in the particular embodimentsdisclosed which are within the scope of the invention as outlined by theappended claims. Having thus described aspects of the invention, withthe details and particularity required by the patent laws, what isclaimed and desired protected by Letters Patent is set forth in theappended claims.

1. A method of forming a resistive random access memory (ReRAM) device,comprising: depositing a lower cap layer directly on a source/draincontact, wherein the source/drain contact is in direct contact with asource/drain on a substrate; depositing a dielectric memory layer on thelower cap layer; depositing an upper cap layer on the dielectric memorylayer; forming a resistive element template on the upper cap layer;removing portions of the lower cap layer to form a lower cap slab,dielectric memory layer to form a dielectric memory slab on the lowercap slab, and upper cap layer to form an upper cap slab on thedielectric memory slab, exposed by the resistive element template,wherein the lower cap slab, dielectric memory slab, and upper cap slabform a resistive memory element; and forming a protective liner on theresistive element template and resistive memory element.
 2. The methodof claim 1, wherein the lower cap layer and upper cap layer each have athickness in a range of about 2 nanometers (nm) to about 50 nm.
 3. Themethod of claim 1, wherein the dielectric memory layer has a thicknessin a range of about 2 nm to about 15 nm.
 4. The method of claim 1,further comprising forming a field effect transistor device on thesubstrate, wherein the field effect transistor device includes thesource/drain, and wherein the resistive memory element is above andelectrically connected to the source/drain through the source/draincontact.
 5. The method of claim 4, further comprising forming theprotective liner on the field effect transistor device.
 6. The method ofclaim 4, wherein the material of the dielectric memory layer is selectedfrom the group consisting of hafnium oxide (HfO), zirconium oxide (ZrO),lanthanum oxide (LaO), and combinations thereof.
 7. The method of claim6, wherein the material of the lower cap layer and upper cap layer areeach selected from the group consisting of titanium nitride (TiN),zirconium nitride (ZrN), hafnium nitride (HfN), tantalum nitride (TaN),niobium nitride (NbN), and combinations thereof.
 8. The method of claim7, further comprising forming a memory element contact to the upper capslab of the resistive memory element.
 9. The method of claim 8; whereinthe resistive memory element covers a surface area of about 500 nm² toabout 50,000 nm².
 10. A method of forming a resistive random accessmemory (ReRAM) device, comprising: forming a vertical fin on asubstrate; growing a source/drain on the vertical fin; forming asource/drain contact directly on the source/drain; depositing a lowercap layer directly on the source/drain contact; depositing a dielectricmemory layer on the lower cap layer; depositing an upper cap layer onthe dielectric memory layer; forming a resistive element template on theupper cap layer; removing portions of the lower cap layer, dielectricmemory layer, and upper cap layer exposed by the resistive elementtemplate to form a resistive memory element directly on the source/draincontact; and forming a protective liner on the resistive elementtemplate and resistive memory element.
 11. The method of claim 10,wherein the resistive element template is formed by depositing a maskinglayer on the upper cap layer, and patterning the masking layer to formthe resistive element template above the source/drain contact.
 12. Themethod of claim 11, wherein the protective liner is selected from thegroup of dielectric materials consisting of silicon nitride (SiN),silicon oxynitride (SiON), silicon boronitride (SiBN), silicon borocarbonitride (SiBCN), silicon carbonitride (SiCN), siliconoxycarbonitride (SiOCN), and combinations thereof.
 13. The method ofclaim 12, wherein the material of the dielectric memory layer isselected from the group consisting of hafnium oxide (HfO), zirconiumoxide (ZrO), lanthanum oxide (LaO), and combinations thereof.
 14. Themethod of claim 13, wherein the material of the lower cap layer andupper cap layer are each selected from the group consisting of titaniumnitride (TiN), zirconium nitride (ZrN), hafnium nitride (HfN), tantalumnitride (TaN), niobium nitride (NbN), and combinations thereof.
 15. Themethod of claim 14, wherein the upper cap layer and lower cap layer havethe same material and the same thickness to provide symmetricalproperties.
 16. A resistive random access memory (ReRAM) device,comprising: a vertical fin on a substrate; a first source/drain on thevertical fin; a first source/drain contact on the source/drain; a lowercap slab on the first source/drain contact; a dielectric memory slab onthe lower cap slab; and an upper cap slab on the dielectric memory slab,wherein the lower cap slab, dielectric memory slab, and upper cap slabform a resistive memory element electrically coupled to the firstsource/drain.
 17. The resistive random access memory (ReRAM) device ofclaim 16, further comprising a second source/drain on the vertical fin,and a second source/drain contact on second the source/drain.
 18. Theresistive random access memory (ReRAM) device of claim 16, wherein thematerial of the dielectric memory slab is selected from the groupconsisting of hafnium oxide (HfO), zirconium oxide (ZrO), lanthanumoxide (LaO), and combinations thereof.
 19. The resistive random accessmemory (ReRAM) device of claim 18, wherein the material of the lower capslab and upper cap slab are each selected from the group consisting oftitanium nitride (TiN), zirconium nitride (ZrN), hafnium nitride (HfN),tantalum nitride (TaN), niobium nitride (NbN), and combinations thereof.20. The resistive random access memory (ReRAM) device of claim 19,wherein the resistive memory element has a width in a range of about 40nm to about 1000 nm, and a length in a range of about 40 nm to about1000 nm.